abbreviations.csv

Abbreviations;Meaning
%;Percentage
2D;two-dimensional
2DEG;Two Dimensional Electron Gas
3D;three-dimensional
4G;4th Generation
AAF;Assembly Analytical Forum 
ACF;Anisotropically Conductive Film
AEI;Absorbed Electron Image
AES;Auger Electron Spectroscopy
AET;Accelerated Environmental Test
AFM;Atomic Force Microscopy
AFP;Atomic Force Probing
AIAG;Automotive Industry Action Group
ALD;Atomic Layer Deposition
ALT;Accelerated Life Test
AOI;Automatic Optical Inspection
AP;Atom Probe
APD;Avalanche Photodiode
APDs;Generally Avalanche Photodiodes
APQP;Advanced Product Quality Planning
APS;Active Pixel Sensor
AQL;Acceptable Quality Level
ASIC;Application Specific Integrated Circuit
ASICs;Application Specific Integrated Circuits
AST;Accelerated Stress Test
ASTM;American Society For Testing And Materials
AVR;Applied Voltage Ratio
AVRs;Applied Voltage Ratios
Ag;Silver
Al;Aluminum
Al2Cu;Metal Caused By Theta Phase
Au;Gold
BD;Breakdown
BEI;Backscattered Electron Imaging
BEM;Backside Emission Microscopy
BEOL;Back End of  Line  
BFA;Bouncing Failure Analysis
BGA;Ball Grid Array
BGAs;Ball Grid Arrays
BGBC;Gate Bottom Contact
BHT;Bias-Humidity-Temperature
BIR;Building-In Reliability
BISR;Built-In Self-Repair
BIST;Built-In-Self-Test
BJT;Bipolar Junction Transistor
BLT;Bond Line Thickness
BME;Base Metal Electrode
BOE;Buffered Oxide Etch
BSE;Backscattered Electron
BSEs;Topology Differences Backscattered Electrons
BT;Bias Temperature
Bi;Bipolar
BiMOS;Bipolar Mos
BiR;Building In Reliability
BioMEMS;Biological Mems
C-SAM;C-Mode Scanning Acoustic Microscopy
C60;Buckminsterfullerene
CAA;Corrective Action Assessment
CAD;Computer-Aided Design
CAE;Computer-Aided Engineering
CAFM;Conductive Atomic Force Microscopy
CALCE;Computer-Aided Life-Cycle Engineering
CATV;Community Access Television or Community Antenna Television
CBR;Based Reasoning
CCD;Charge-Coupled Devices
CCGA;Ceramic Column Grid Array
CCS;Constant Current Stress
CCSs;Constant Current Stresses
CCVC;Capacitive Coupling Voltage Contrast
CDEs;Radiation Cable Discharge Events
CDM;Charged Device Model
CE;Circuit Edit
CERDIP;Ceramic Dual-In-Line Package
CERQUAD;Ceramic Quad Flat Package
CESL;Contact Etch Stop Layer
CFM;Charge Force Microscopy
CFR;Constant Failure Rate
CHC;Channel Hot Carrier
CHE;Channel Hot Electrons
CHEs;Carriers Channel Hot Electrons
CI;Continuous Improvement
CLSM;Confocal Laser Scanning Microscopy
CMOS;Complementary Metal Oxide Semiconductor
CMP;Chip Multi-Processor
CNT;Carbon Nano Tube
CNTs;Carbon Nanotubes
COTS;Commercial Off-The-Shelf
CP;Charge Pumping
CPI;Continuous Process Improvement
CPMT;Packaging And Manufacturing Technology
CPU;Central Processing Unit
CRT;Cathode Ray Tube
CSG;Silicon On Glass
CSIC;Compound Semiconductor IC
CSLM;Confocal Scanning Laser Microscope
CSM;Continuous Stiffness Measurement
CSP;Chip-Scale Packaging
CST;Constant-Stress Test
CT;Computed Tomography
CTE;Coefficient of Thermal Expansion
CTR;Current Transfer Ratio
CVD;Chemical Vapour Deposition
CVS;Constant Voltage Stress
Cl;Chlorine
CoWP;Cobalt Tungsten Phosphide
Cr;Chromium
Cu;Copper
D;Deuterium
DAC;Design Analysis Cycle
DAFs;Die Attach Films
DAHCs;Field Drain Avalanche Hot Carriers
DB;Dielectric Breakdown
DBS;Dual Beam Spectroscopy
DC;Direct Current
DCV;Direct Contact Via
DD;Dual Damascene
DDAF;Dicing Die Attach Film
DEMO;Demonstration
DFFA;Design For Failure Analysis
DFM;Design For Manufacturing
DFR;Decreasing Failure Rate
DFS;Design For Safety
DFSS;Design For Six Sigma
DFT;Design For Testability
DG;Double Gate
DGSOI;Double-Gate Silicon-On- Insulator
DIL;Dual In-Line
DIMM;Dual In-Line Memory Module
DIP;Dual In-Line Plastic
DLTS;Deep Level Transient Spectroscopy
DMD;Digital Micromirror Device
DMOS;Diffused Metal-Oxide Semiconductor
DPA;Destructive Physical Analysis
DPM;Defects Per Million
DPPM;Defects Parts Per Million
DRAM;Dynamic Random Access Memory
DRAMs;Dynamic Random Access Memories
DSC;Differential Scanning Calorimetry
DSO;Digital Sampling Oscilloscope
DSSC;Dye Sensitized Solar Cell
DTA;Differential Thermal Analysis
DUT;Device Under Test
DUV;Deep Ultraviolet
DfM;Design For Manufacturability
DfR;Design For Reliability
DoD;Department Of Defense
E.q.;Exempli Gratia
EAPROM;Electrically Alterable Prom
EAROM;Electrically Alterable
EB;Emitter Base
EBAC;Electron Beam Absorbed Current
EBIC;Electron Beam Induced Current
EBIV;Electron-Beam-Induced Voltage
EBL;Encapsulated Beam Lead
EBSD;Electron Backscatter Diffraction
ECTC;Electronic Components and Technology Conference
ECU;Engine Control Unit
EDS;Energy Dispersive X-Ray Spectroscopy
EDX;Energy-Dispersive X-Ray
EELS;Electron Energy-Loss Spectrometry
EEPROM;Electrically Erasable Prom
EEROM;Electrically Erasable Rom
EFA;Electrical Failure Analysis
EFDIA;Failure Detection And Isolation Arrangement
EFM;Electrical Force Microscopy
EFR;Early Failure Rate
EIA;Electronic Industries Alliance
EIS;Impedance Spec Troscopy
EM;Electromigration
EMC;Electromagnetic Compatibility
EMF;Electromagnetic Field
EMP;Electromagnetic Pulse
EOS;Electrical Overstress
EOTPR;Electro Optical Terahertz Pulsed Reflectometry
EPMA;Electron-Probe Micro-Analysis
EPROM;Erasable Rom
ERCS;Exponential Ramped Current Stress
ESC;Environmental Stress Cracking
ESCA;Electron Spectroscopy For Chemical Analysis
ESD;Electrostatic Discharge
ESEM;Environmental Sem
ESP;Electronic Stability Control
ESR;Equivalent Series Resistance
ESREF;European Symposium on Reliability of Electron Devices
ESS;Environmental Stress Screening
ESTC;Electronics System-Integration Technology Conferences
ESTM;Electrochemical Scanning Tunneling Microscope
ETA;Event Tree Analysis
EVA;Ethylene Vinyl Acetate
F;Fluorine
FA;Failure Analysis
FC;Flip Chip
FCA;Free-Carrier Absorption
FCBGA;Flip-Chip Ball Grid Array
FD;Fully Depleted
FDSOI;Fully Depleted Silicon On Insulator
FE;Finite Element
FEA;Finite Element Analysis
FEM;Finite Element Modelling
FESEM;Field Emission Scanning Electron Microscopy
FESEMs;Field Emission Scanning Electron Microscopes
FET;Tem Transmission Electron
FFDM;Function Failure Design Method
FFT;Fast Fourier Transform
FI;Fault Isolation
FIB;Focused Ion Beam
FID;Failure Interaction And Dependency
FIM;Field Ion Microscopy
FIT;Failure In Unit Time
FM;Failure Mechanism
FMA;Failure Mode Assessment
FMEA;Failure Mode And Effect Analysis
FMECA;Failure Mode Effect And Criticality Analysis
FMEDA;Failure Modes Effects And Diagnostic Analysis
FMI;Fluorescent Microthermal Imaging
FMMEA;Failure Modes Mechanisms And Effects Analysis
FMo;Failure Mode
FMos;Failure Modes
FMs;Failure Mechanisms
FO;Fiber Optic
FOWLP;Fan-Out Wafer Level Package
FP;Flat Package
FPBGA;Flip-Chip Ball Grid Array
FPGA;Field Programmable Gate Array
FPNI;Field Programmable Nanowire Interconnect
FRACAS;Failure Reporting Analysis And Corrective Action System
FTA;Fault Tree Analysis
FTIR;Fourier Transform Infrared Spectroscopy
FTTF;First Time To Failure
FUSI;Fully Silicided
Fe;Iron
GHz;Giga Hertz
GI;Gate Insulator
GIDL;Gate Induced Leakage Current
GIQLP;Industry Quality Liaison Panel
GIS;Gas Injection System
GSCI;Generated Subordinate Carrier Injection
GTO;Gate-Turn-Off Thyristor
Ga+;Gallium
GaAs;Transistors Mems Gallium Arsenide
GaN;Gallium Nitride
H;Hydrogen
HALT;Highly Accelerated Life Testing
HASS;Highly Accelerated Stress Screening
HAST;Highly Accelerated Stress Test
HASTs;Highly Accelerated Stress Tests
HBM;Human Body Model
HBT;Heterojunction Bipolar Transistor
HBTs;The Heterojunction Bipolar Transistors
HC;Hot-Carrier
HCD;Hot-Carrier Degradation
HCI;Hot-Carrier Injection
HEMT;High-Electron-Mobility Transistor
HEMTs;The High Electron Mobility Transistors
HFET;Heterojunction Field Effect Transistor
HFETs;Heterostructure Field Effect Transistors
HI;Holographic Interferometry
HICs;Manufacture Hybrid Integrated Circuits
HMOS;High-Performance, N-Channel Silicon Gate Mos
HR;High Resolution
HREM;High Resolution Electron Microscopy
HRTEM;High Resolution Tem
HTOL;High Temperature Operating Life
HTRB;High Temperature Reverse Bias
HVPE;Hydride Vapour Phase Epitaxy
IAEA;International Atomic Energy Agency
IBM;International Business Machine
IC;Integrated Ciruit
ICBO;Increase Of Leakage Current
ICE;Collectoremitter Current
ICs;Integrated Circuits
IF;Interface
IFR;Increasing Failure Rate
IGBT;Insulated Gate Bipolar Transistor
IITRI;Iit Research Institute
ILD;Inter Layer Dielectric
IMAPS;International Microelectronics And Packaging Society
IMD;Inter Metal Dielectric
IME;Institute Of Microelectronics
IMEC;Interuniversitary Microelectronics Centre
IMMA;Ion Microprobe Mass Analysis Integrated Circuits
IMPATT;Diodes Impact Ionization Avalanche Transit Time
IP;Intellectual Property
IPAD;Integrated Passive And Active Device
IR;Infrared
IRAS;Infrared Absorption Spectrometry
IRED;Infrared Emitting Diode
IREM;Infrared Emission Microscopy
IRLIT;Infrared Lock-In Thermography
IRM;Infrared Microscopy
IRPS;International Reliability Physics Symposium
ISS;Ion Scattering Spectrometry
ISTFA;International Symposium for Testing and Failure Analysis
ITC;International Test Conference
ITO;Indium Tin Oxide
ITP;In-Target Probe
ITRS;International Technology Roadmap for Semiconductors
Idlin;Linear Drain Current
InGaAS;Indium Gallium Arsenide
JAN;Joint Army-Navy
JEDEC;Joint Electron Device Engineering Council
JFET;Junction Field Effect Transistors
JFETs;Junction Field Effect Transistors
KPFM;Kelvin Probe Force Microscope
LASER;Light Amplification By Stimulated Emission Of
LBIC;Laser Beam Induced Current
LC;Liquid Crystal
LCA;Liquid Crystal Analysis
LCC;Leadless Chip Carrier
LCD;Liquid Crystal Display
LCs;Liquid Crystals
LD;Laser Diode
LDCC;Leaded Chip Carriers
LDD;Lightly Doped Drain
LDMOS;Lateral Mos Transistors
LED;Light Emitting Diode
LEDs;Light Emitting Diodes
LEED;Low-Energy Electron Diffraction
LEM;Light Emission Microscopy
LGA;Land Grid Array
LIFT;Laser Induce Forward Transfer
LIGA;Lithographie Galvanoformung
LIT;Lock-in Thermography
LIVA;Light Induced Voltage Alteration
LPCVD;Low Pressure Chemical Vapour Deposition
LRVS;Linear Voltage Ramp Stress
LSI;Large Scale Integration
LTEM;Laser Terahertz Emission Microscopy
LTPD;Lot Tolerance Percent Defective Management
LTRM;Term Reliability Monitor
LVRS;Linear Voltage Ramp Stress
Li;Lithium
MBB;Messerschmitt Boilkow Blohm
MC;Multichip
MCM;Multi-Chip Module
MCOV;Maximum Continuous Operating Voltage
MCP;Multi-Chip Package
MCPs;Multichip Packages
MDM;Metal-Dielectric-Metal
MEMS;Micro Electro Mechanical Systems
MEMSs;Developing Micro Electro Mechanical Systems
MESFET;Metal-Semiconductor Fet
MFM;Magnetic Force Microscopy
MGT;Mos-Gated Thyristor
MHz;Mega Hertz
MI;Moirae Interferometry
MIC;Mobile Ionic Contamination
MIEL;International Conference On Microelectronics
MIL;Military Electronics
MIL-HDBK;Military Handbook
MIL-STD;Military Standard
MIM;Metal-Insulator-Metal
MIS;Metal-Insulator-Semiconductor
MISFET;Metal Insulator Semiconductor
MJ;Multijunction 
MLCC;Multilayer Ceramic Capacitor
MLCCs;Studied Multilayer Ceramic Capacitors
MLE;Maximum Likelihood Estimation
MLP;Multi Layer Perception
MM;Man Month
MMIC;Monolithic Microwave Integrated Circuit
MMICs;Gaas Monolithic Microwave Integrated Circuits
MNOS;Metal-Nitride-Oxide-Semiconductor
MOCVD;Metal-Organic Chemical Vapour Deposition
MODFETs;Modulation Doped Field Effect Transistors
MOEMS;Micro-Optical Electromechanical Systems
MOEMSs;Micro Optical Electrome Chanical Systems
MOS;Metal-Oxide Semiconductor
MOSFET;Metallic Oxide-Semiconductor Field-Effect Transistor
MOST;Metal-Oxide Semiconductor Transistor
MOV;Metal Oxide Varistors
MOVs;Metal Oxide Varistors
MQW;Multi-Quantum Well
MS;Milestone
MST;Microsystem Technology
MTBF;Mean Time Between Failures
MTTF;Mean Time To Failure
MTTFF;Mean Time To First Failure
MTTR;Mean Time To Repair
Mn2O3;Highly Resistive State
MnO2;Semi Conductive State
MtM;More than Moore
M€;Million Euro
NAA;Neutron Activation Energy
NASA;Aeronautics And Space Administration
NBT;Negative Bias Temperature
NBTI;Negative Bias Temperature Instability
NCF;Nonconductive Film
NDE;Non-Destructive Evaluation
NEMS;Nano-Electro-Mechanical Switches
NEMSs;Nanoelectronic Circuits And Nanoelectromechanical Systems
NF;Noise Figure
NFF;No Fault Found
NIL;Network Nanoimprint Lithography
NIST;Standards And Technology
NMOS;N-Channel (Type) Mos
NOM;Nomarski Optical Microscopy
NSOM;Near-Field Scanning Optical
NTF;Troubled Found
Ni;Contacts Nickel
NiCr;Coated With Nickel Chromium
O;Oxygen
OAPVD;Oblique Angle Physical Vapour Deposition
OBIC;Optical Beam-Induced Current
OBIRCH;Optical Beam Induced Resistance Change
OES;Optical Emission Spectrometry
OFET;Organic Fet
OLED;Organic Light-Emitting Diode
OM;Optical Microscopy
OSF;Oxidation-Induced Stacking Faults
PA;Power Amplifier
PAM;Photo-Acoustic Microscopy
PBGA;Plastic-Ball-Grid-Array
PBTI;Positive Bias Temperature Instability
PC;Personal Computer
PCB;Printed Circuit Board
PCBs;Printed Circuit Boards
PCD;Plasma Charging Damage
PCT;Pressure Cooking Test
PCs;Personal Computers
PD;Preliminary Design
PDA;Personal Digital Assistant
PDIP;Plastic Dual In-Line Package
PDP;Plasma Display Panels
PDT;Product Development Test
PEALD;Plasma Enhanced Atomic Layer Deposition
PECVD;Plasma Enhanced Chemical Vapour Deposition
PED;Plastic Encapsulated Device
PEM;Plastic Encapsulated Microcircuit
PEMs;Plastic Encapsulated Microcircuits
PEN;Polyethylene Naphthalate
PET;Polyethylene Terephthalate
PFA;Physical Failure Analysis
PFIB;Plasma Focused Ion Beam
PGA;Pin Grid Array
PHEMT;Pseudomorphic High Electron Mobility Transistor
PHM;Prognostics And Health
PIND;Particle Impact Noise
PL;Photoluminescence
PLZT;Lead Lanthanum Zirconate Titanate
PM;Preventive Maintenance
PMOS;P-Channel (Type) Mos
PPS;Polyphenylene Sulfide
PQFN;Power Quad Flat-Pack No-Lead
PQFP;Plastic Quad Flat Pack
PRA;Probabilistic Risk Assessment
PRAM;Phase-Change Random Access Memory
PROACT;"Preserving Failure Data; Ordering The Analysis"
PROM;Programmable Rom
PSA;Photoemission Spectrum Analyzer
PSG;Phosphosilicate Glass
PSGA;Polymer Stud Grid Array
PV;Photovoltaics
PVD;Physical Vapour Deposition
PVT;Physical Vapour Transport
PVs;Heading Photovoltaics
PWB;Printed Wire/Wiring Board
PWBA;Printed Wiring Board Assembly
PWBs;Organic Printed Wire Boards
PZT;Passive Components
Pa;Pressure
Pb;Lead
PbO;Lead Oxide
PoF;Physics Of Failure
Pt;Platinum
Q&RA;Quality And Reliability Assurance
QA;Quality Assurance
QALT;Quantitative Accelerated Life Test
QB;Quasi-Breakdown
QBD;Charge-To-Breakdown
QC;Quality Control 
QCT;Spc Quality Control Team Qd Vcsels
QD;Quantum Dot
QDs;Cnts Quantum Dots
QFD;Quality Function Deployment
QFN;Quad Flat No-Lead
QFP;Quad Flat Package
QLT;Quantitative Life Test
QLTs;Category Quantitative Life Tests
QML;Qualified Manufacturer List
QMP;Quality Measurement Plan
QPL;Qualified Parts List
QRA;Quality Reliability Assurance
QRRM;Quick Reaction Reliability Monitor
R&D;Research and Development
R&M;Reliability And Maintainability
RA;Reliability Assurance
RAC;Reliability Analysis Centre
RADAR;Radio Detection and Ranging
RAM;Random Access Memory
RAMS;Reliability Availability Maintainability And Safety
RB;Base Resistance
RBD;Reliability Block Diagram
RBS;Rutherford Back-Scattering Spectrometry
RBSOA;Reverse Bias Safe Operation Area
RDL;Redistribution Layers
RE;Emitter Resistance
REDR;Recombination Enhanced Defect Reaction
REPROM;Reprogrammable Rom
RF;Radio Frequency
RFIC;Radio Frequency Integrated Circuits
RGA;Residual Gas Analysis
RH;Relative Humidity
RHEED;Reflected High-Energy Electron Diffraction
RIAC;Reliability Information Analysis Centre
RIE;Reactive Ion Etch(Ing)
ROC;Receiver Operating Characteristic
ROHS;Restriction Of Hazardous Substances
ROI;Region of Interest
ROM;Read-Only Memory
RPNs;Steps Risk Priority Numbers
RTA;Rapid Thermal Annealing
RTESA;Real Time Electrical Stress Analysis
RVS;Ramped Voltage Stress
Raman;Raman6 Spectroscopy Uses The Inelastic
Rem−1;Raman Frequency
RoHS;Restriction Of Hazardous Substances
Ru;Ruthenium
RuO2;Ruthenium Dioxide
S-SNOM;Scanning Near-field Optical Microscopy
S1;Sample
SAB;Aligned Barrier
SAC305;Sn Wt% Ag Wt% Cu
SAE;Automotive Engineers
SAF;Stuck-At-Fault
SAM;Scanning Acoustic Microscopy
SAT;Scanning Acoustic Test
SB;Soft-Breakdown
SBD;Schottky Barrier Diode
SBE;Single Bit Errors
SBH;Schottky Barrier Height
SC;Silicon carbide
SCAT;Scanning Acoustic Tomography
SCM;Scanning Capacitance Microscopy
SCP;Single Chip Package
SCPs;Package Single Chip Packages
SCR;Silicon-Controlled Rectifier
SCS;Single Crystal Silicon
SDRAM;Synchronous Dram
SEB;Single Event Burnout
SECC;Single Edge Contact Cartridge
SED;Strain Energy Density
SEE;Single Event Effect
SEGD;Single Event Gate Damage
SEGR;Single Event Gate Rupture
SEI;Seebeck Effect Imaging
SEL;Single Event Latch-Up
SEM;Scanning Electron Microscopy
SER;Soft-Error Rate
SERs;Soft Error Rates
SET;Single Event Transient
SEU;Single Event Upset
SEUs;Single Event Upsets
SG;Stage Gate
SHEs;Substrate Hot Electrons
SHPBs;Split Hopkinson Pressure Bars
SHRT;Solder Heat Resistance Test
SIA;Semiconductor Industry Association
SILC;Stress-Induced Leakage Current
SILCs;Stress Induced Leakage Currents
SILOX;Silicon Oxide
SIMOX;Separation By Implanted Oxygen
SIMS;Secondary-Ion Mass Spectrometry
SIP;System-In-Package
SM;Stress Migration
SMD;Surface Mount Devices
SME;Small and Medium-Sized Enterprise
SMM;Scanning Microwave Microscopy
SMT;Surface-Mount Technology
SMU;Source Measure Unit
SNOM;Scanning Near-Field Optical Microscopy
SNPEM;Scanning Near-Field Photon Emission Microscopy
SO;Small Outline
SOA;Safe Operating Area Sob
SOI;Silicon On Insulator
SOIC;Small Outline IC
SOJ;Small Outline J-Leaded
SOM;Scanning Optical Microscopy
SOP;System On Package
SOS;Silicon On Sapphire
SPAM;Scanning Photo-Acoustic Microscopy
SPC;Statistical Process Control
SPEM;Spectroscopic Photon Emission Microscopy
SPM;Scanning Probe Microscopy
SPP;Steam Pressure Pot
SQC;Statistical Quality Control
SQUID;Superconducting Quantum Interference Device
SRAM;Static Ram
SRQAC;Software Reliability And Quality Acceptance Criteria
SSDI;Shadow Spectral Digital Imaging
SSF;Shadow Spectral Filming
SSG;Selective Silicon Growth
SSHE;Scraped Surface Heat Exchanger
SSHEs;Source Side Hot Electrons
SSI;Small Scale Integration
SSL;Solid State Lighting
SSM;Scanning Squid Microscopy
SSMS;Spark Source Mass Spectrometry
SSR;Step-Stacked-Routing
SSRM;Scanning Spreading Resistance Microscopy
SST;Step-Stress Tests
SSTL;Stub Series Terminated Logic
SSY;Small-Scale Yielding
ST;Stress Test
STEM;Scanning Transmission Electron
STI;Shallow Trench Isolation
STM;Scanning Thermal Microscopy
SThM;Techniques Scanning Thermal Microscopy
STs;Called Stress Tests
SWAT;Software Anomaly Treatment
SWC;Solderless Wire Wrap Connecting
SWCNT;Single-Walled Carbon Nanotube
SWEAT;Standard Wafer Level Electromigration Accelerated
SXAPS;Soft X-Ray Appearance Potential Spectroscopy
SYRP;Synergetic Reliability Prediction
Si;Silicon
Si3N4;Stress Measurements Long Silicon Nitride
SiC;Time Silicon Carbide
SiNx;Silicon Nitride
SiO2;Dose Of L08 Rad
SiOC;Κ Materials
SiP;System-in-Package
SoC;System-on-Chip
SoP;System-on-Package
T-RAM;Thyristor-Based Random Access Memory
TAB;Tape Automated Bonding
TAP;Test Access Port
TBC;Thermal Barrier Coating
TBD;Time To Breakdown
TBFD;Trace Based Fault Diagnosis
TBJD;Trench Bipolar Junction Diode
TC;Temperature Cycling
TCAD;Technology Computer Aided Design
TCCT;Thin Capacitively-Coupled Thyristor
TCR;Temperature Coefficient Of Resistance
TCT;Thermal Cycling Test
TD;Threading Dislocation
TDBI;Test During Burn-In
TDDB;Time-Dependent Dielectric Breakdown
TDI;Test Data In
TDO;Test Data Output
TDR;Time Domain Reflectometry
TDTR;Time Domain Thermal Reflectance
TED;Transient Enhanced Diffusion
TEELS;Transmission Electron
TEGFET;Two-Dimensional Electron Gas
TEM;Transmission Electron
TEM-ED;Transmission Electron Microscopy – Electron
TEV;Through Encapsulant Via
TFD;Thin Film Delamination
TFH;Thin Film Hybrid
TFO;Thick Field Oxide
TFT;Thin-Film Transistor
TGA;Thermo Gravimetric Analysis
TGO;Thermally Grown Oxide
TH;Lead-Free Through-Hole Flow Soldering
THB;Temperature Humidity Bias
TI;Texas Instruments
TID;Total Ionising Dose
TIR;Testing-In Reliability
TIVA;Thermally-Induced Voltage Alteration
TIs;Texas Instruments
TLM;Transfer Length Method
TLP;Transmission Line Pulsing
TLPS;Transmission Line Pulse Spectroscopy
TLS;Thermal Laser Stimulation
TLU;Transient Induced Latch-Up
TMA;Thermo-Mechanical Analysis
TMAH;Tetramethylammonium Hydroxide
TMIC;Transition Metal Ion Chromatography
TMR;Tunnelling Magneto-Restrictive
TMS;Test Mode
TNI;Troubled-Non-Identified
TO;Transistor Outline
TOC;Tactical Operations Centres
TOF;Time-Of-Flight 
TOFSIMS;Time-Of-Flight Secondary Ion Mass Spectroscopy
TOV;Temporary Overvoltage
TPR;Technical Plan For Resolution
TQL;Total Quality Leadership
TQM;Total Quality Management
TRM;Thermal Reflectance Microscopy
TRPE;Time-Resolved Photon Emission Prober
TRST;Test Reset
TRXRFA;Total Reflection X-Ray Fluorescence Analysis
TSC;Two-Step Crystallization
TSI;Top-Surface Imaging
TSOP;Thin Small Online Plastic
TSPD;Thyristor Surge Protection Devices
TST;Thermal Shock Test
TSV;Through Silicon Via
TSVs;Through Silicon Vias
TTAA;Time To Acceptable Analysis
TTF;Time To Failure
TTL;Transistor-Transistor Logic
TTL-LS;Transistor-Transistor Logic-Low Power Schottky
TTR;Time To Repair
TTS;Transistor-Transistor Logic Schottky Barrier
TVS;Transient Voltage Suppressor
TXRF;Total Reflection X-Ray Fluorescence
TZDB;Time-Zero Dielectric Breakdown
Ta;Tantalum
TaN;Tantalum Nitride
Tg;Transition Temperature
T€;Thousand Euro
UBM;Under Bump Metallization / Metallurgy
UCL;Upper Confidence Level
UF;Underfilling
UFP;Ultra Fine Pitch
UHV;Ultra High Vacuum
UJT;Unijunction Transistor
UK;Materials Centre
ULSI;Ultra Large Scale Integration
UPH;Units Per Hour
UPS;Ultraviolet Photoelectron Spectrometry
UPW;Ultra-Pure Water
UR;Usage Rates
US;United States of America
USA;United States of America
USG;Undoped Silica Glass
USJ;Ultra-Shallow Junctions
UUT;Unit Under Test
UV;Ultraviolet
VC;Voltage Contrast
VCE;Collectoremitter Voltage
VCSEL;Vertical-Cavity Surface- Emitting Laser
VDMOS;Vertical Double Diffused Mos
VDMOSFET;Vertical Diffused Mosfet
VDSM;Very Deep Submicron
VFB;Voltage Flat Band
VHDL;Very High Density Logic
VHSIC;Very High Speed Integrated Circuit
VLSI;Very Large Scale Integration
VMDP;Velocity-Matched Distributed Photodetectors
VMOS;V-Groove Mos / Vertical Mos
VPE;Vapour Phase Epitaxy
VSMI;Volumetric System Miniaturization And
VTC;Voltage Transfer Characteristics
VTCMOS;Variable Threshold Voltage
Vp;Voltage
W;Tungsten
WBC;Wafer Backside Coating
WDM;Wavelength Division Multiplexing
WDX;Wavelength Dispersive X-Ray
WGPD;Waveguide Photodiode
WGPDs;Reliability Of Planar Waveguide Photodiodes
WIP;Work In Progress
WL;Word Line
WLCSP;Wafer-Level Chip Scale Packaging
WLI;White Light Interferometry
WLP;Wafer-Level Packaging
WLR;Wafer-Level Reliability
WLTBI;Wafer-Level Testing During
WP;Workpackage
WSI;Wafer Scale Integration
WSN;Wireless Sensor Networks
X;Cycle
XAES;X-Ray-Induced Auger Electron Spectrometry
XEDS;X-Ray Energy Dispersive Spectroscopy
XES;X-Ray Energy Spectroscopy
XIVA;External Induced Voltage Alteration
XPD;X-Ray Photoelectron Diffraction
XPS;X-Ray Photoelectron
XRD;X-Ray Diffraction
XRF;X-Ray Fluorescence
XRFA;X-Ray Fluorescence Spectrometric Analysis
XRM;X-Ray Microscopy
XRPM;X-Ray Projection Microscopy
XRR;X-Ray Reflectivity
XTEM;X-Ray Transmission Electron Microscopy
XeF2;Xenon Difluoride
Z;Depth
ZD;Zero Defect
ZIF;Zero Insertion Force
ZMR;Zone-Melting Recrystallized