From 20de2dce706b885042d092010e4c777d6e3a17d1 Mon Sep 17 00:00:00 2001 From: Felix Hagemann Date: Fri, 25 Oct 2024 16:55:48 +0200 Subject: [PATCH] Fix small typo in docs --- docs/src/man/charge_drift.md | 2 +- 1 file changed, 1 insertion(+), 1 deletion(-) diff --git a/docs/src/man/charge_drift.md b/docs/src/man/charge_drift.md index 942adc7a3..96a37f914 100644 --- a/docs/src/man/charge_drift.md +++ b/docs/src/man/charge_drift.md @@ -220,7 +220,7 @@ In this case, the signal is calculated using the Schockley-Ramo theorem, i.e. by ### `BoggsChargeTrappingModel` In SolidStateDetectors.jl, the only charge trapping model implemented so far is the one presented in [Boggs _et al._ (2023)](https://doi.org/10.1016/j.nima.2023.168756). -In this model, the charge cloud loses part of its charge at every point `path[i]` of the charge drift, depending on its drift and thermal velocity, as well as the trapping product $[n\sigma_{E/h}]^{-1}$ for electrons and holes. +In this model, the charge cloud loses part of its charge at every point `path[i]` of the charge drift, depending on its drift and thermal velocity, as well as the trapping product $[n\sigma_{e/h}]^{-1}$ for electrons and holes. The charge signal is then given by the charge-decreased charge cloud reaching the contacts and the charges trapped on the way. The `BoggsChargeTrappingModel` can be applied in the configuration file by adding a field `charge_trapping_model` to the `semiconductor` with `model: Boggs` and `parameters` defining the (inverse) trapping products and (optionally) the `temperature`: