Device.bib

% =============================================================
%                     CAD for Device 
% =============================================================
# ==== device summary
@article{DEV-JSSC1974-Dennard,
  title     = {Design of ion-implanted {MOSFET's} with very small physical dimensions},
  author    = {Dennard, Robert H and Rideout, VL and Bassous, E and Leblanc, AR},
  journal   = jssc,
  volume    = {9},
  number    = {5},
  pages     = {256--268},
  year      = {1974},
}
@inproceedings{DEV-IEDM2005-Horowitz,
  title     = {Scaling, power, and the future of {CMOS}},
  author    = {Horowitz, Mark and Alon, Elad and Patil, Dinesh and Naffziger, Samuel and Kumar, Rajesh and Bernstein, Kerry},
  booktitle = iedm,
  pages     = {7--15},
  year      = {2005},
}
@article{DEV-IETCDT2016-Aitken,
    title     = {Predicting future complementary metal--oxide--semiconductor technology--challenges and approaches},
    author    = {Aitken, Robert and Chandra, Vikas and Cline, Brian and Das, Shidhartha and Pietromonaco, David and Shifren, Lucian and Sinha, Saurabh and Yeric, Greg},
    journal   = ietcdt,
    volume    = {10},
    number    = {6},
    pages     = {315--322},
    year      = {2016},
    publisher = {IET},
}


% ===========================================
%                FinFET
% ===========================================
%{{{
@inproceedings{FinFET-SSDM2002-Chau,
  author    = {R. Chau and B. Doyle and J. Kavalieros and D. Barlage and A. Murthy and M. Doczy and R. Arghavani and S. Datta},
  title     = {Advanced Depleted-Substrate Transistors: {Single-gate, DoubleGate and Tri-gate}},
  booktitle = {International Conference on Solid-State Devices and Materials (SSDM)},
  year      = {2002},
}
@article{FinFET-TED2004-Chang,
  author  = {Leland Chang and Meikei Ieong and Min Yang},
  title   = {{CMOS} circuit performance enhancement by surface orientation optimization},
  journal = ted,
  year    = {2004},
  volume  = {51},
  pages   = {1621--1627},
  number  = {10},
  month   = {oct.},
}
@article{FinFET-TED2007-Baravelli, 
  title   = {Impact of Line-Edge Roughness on {FinFET} Matching Performance}, 
  author  = {Baravelli, E. and Dixit, A. and Rooyackers, R. and Jurczak, M. and Speciale, N. and De Meyer, K.}, 
  journal = ted,
  year    = {2007}, 
  month   = {sept.}, 
  volume  = {54}, 
  number  = {9}, 
  pages   = {2466--2474},
}
@article{FinFET-TED2009-Patel, 
  title   = {Gate Line Edge Roughness Model for Estimation of {FinFET} Performance Variability}, 
  author  = {Patel, K. and Tsu-Jae King Liu and Spanos, C.J.}, 
  journal = ted,
  year    = {2009}, 
  month   = {dec.}, 
  volume  = {56}, 
  number  = {12}, 
  pages   = {3055--3063},
}
@article{FinFET-TVLSI2011-Alioto,
  author  = {Alioto, Massimo},
  title   = {Comparative evaluation of layout density in {3T, 4T, and MT FinFET} standard cells},
  journal = tvlsi,
  year    = {2011},
  volume  = {19},
  pages   = {751--762},
  month   = {May},
  issue   = {5},
}
@inproceedings{FinFET-DAC2006-Swahn,
  author    = {Swahn, Brian and Hassoun, Soha},
  title     = {Gate sizing: {finFETs} vs 32nm bulk {MOSFETs}},
  booktitle = dac,
  year      = {2006},
  pages     = {528--531},
}
@article{FinFET-TVLSI2010-Agostinelli,
  title   = {Leakage-delay tradeoff in {FinFET} logic circuits: a comparative analysis with bulk technology},
  author  = {Agostinelli, Matteo and Alioto, Massimo and Esseni, David and Selmi, Luca},
  journal = tvlsi,
  year    = {2010},
  volume  = {18},
  pages   = {232--245},
  month   = {February},
  issue   = {2},
}
@inproceedings{FinFET-ICCAD2006-Choi,
  author    = {Choi, Jung Hwan and Bansal, Aditya and Meterelliyoz, Mesut and Murthy, Jayathi and Roy, Kaushik},
  title     = {Leakage power dependent temperature estimation to predict thermal runaway in {FinFET} circuits},
  booktitle = iccad,
  year      = {2006},
  pages     = {583--586},
}
@inproceedings{FinFET-Mobility-Orientation,
  author    = {Gamiz, F. and Donetti, L. and Rodriguez, N.},
  title     = {Anisotropy of electron mobility in arbitrarily oriented {FinFETs}},
  booktitle = {Solid State Device Research Conference},
  year      = {2007},
  pages     = {378--381},
}
@inproceedings{FinFET-CICC2006-Gu,
  author    = {Jie Gu and Keane, J. and Sapatnekar, S. and Kim, C.},
  title     = {Width Quantization Aware {FinFET} Circuit Design},
  booktitle = cicc,
  year      = {2006},
  pages     = {337--340},
}
@inproceedings{FinFET-ISLPED2005-Guo,
  author    = {Guo, Zheng and Balasubramanian, Sriram and Zlatanovici, Radu and King, Tsu-Jae and Nikoli\'{c}, Borivoje},
  title     = {{FinFET}-based {SRAM} design},
  booktitle = islped,
  year      = {2005},
  pages     = {2--7},
}
@inproceedings{FinFET-IEDM1999-Hergenrother,
  title     = {The Vertical Replacement-Gate {(VRG) MOSFET}: a 50-nm vertical {MOSFET} with lithography-independent gate length},
  author    = {J.~M.~Hergenrother and D.~Monroe and F.~P.~Klemens and A.~Komblit and G.~R.~Weber and W.~M.~Mansfield and M.~R.~Baker and F.~H.~Baumann and et al.},
  booktitle = iedm,
  year      = {1999},
  pages     = {75--78},
}
@inproceedings{FinFET-DAC2011-Hu,
  title     = {New sub-20nm transistors -- Why and how},
  author    = {Hu, Chenming},
  booktitle = dac,
  year      = {2011},
  pages     = {460--463},
}
@inproceedings{FinFET-ICCAD2005-King,
  author    = {King, Tsu-Jae},
  title     = {{FinFETs} for nanoscale {CMOS} digital integrated circuits},
  booktitle = iccad,
  year      = {2005},
  pages     = {207--210},
  numpages  = {4},
}
@inproceedings{FinFET-DATE2010-Mishra,
  title     = {Low-power {FinFET} circuit synthesis using surface orientation optimization},
  author    = {P.~Mishra and N.~K.~Jha},
  booktitle = date,
  year      = {2010},
  pages     = {311--314},
  month     = {march},
}
@article{FinFET-JETC2009-Mishra,
  title   = {Low-power {FinFET} circuit synthesis using multiple supply and threshold voltages},
  author  = {Mishra, Prateek and Muttreja, Anish and Jha, Niraj K.},
  journal = jetc,
  year    = {2009},
  volume  = {5},
  pages   = {7:1--7:23},
  month   = {July},
  issn    = {1550--4832},
  issue   = {2},
}
@article{FinFET-CDM2004-IBM,
  author  = {Nowak, E J and Aller, I and Ludwig, T and Kim, K and Joshi, R V and Chuang, Ching-Te and Bernstein, K and Puri, R},
  title   = {Turning silicon on its edge - double gate {CMOS/FinFET} technolo},
  journal = {IEEE Circuits and Devices Magazine},
  year    = {2004},
  volume  = {20},
  pages   = {20--31},
}
@article{FinFET-APL1993-Ohmi,
  author  = {Ohmi, T. and Matsumoto, K. and Nakamura, K. and Makihara, K. and Takano, J. and Yamamoto, K.},
  title   = {Influence of silicon wafer surface orientation on very thin oxide quality},
  journal = {Applied Physics Letters},
  year    = {1993},
  volume  = {62},
  pages   = {405--407},
  number  = {4},
  month   = {jan},
}
@techreport{FinFET-Intel2011,
  title       = {Intel Announces New 22nm 3{D} {T}ri-gate Transistors},
  institution = {Intel},
  year        = {2011},
} 
@inproceedings{FinFET-ICCAD2009-Rasouli,
  title     = {Variability analysis of {FinFET}-based devices and circuits considering electrical confinement and width quantization},
  author    = {Rasouli, Seid Hadi and Endo, Kazuhiko and Banerjee, Kaustav},
  booktitle = iccad,
  year      = {2009},
  pages     = {505--512},
}
@inproceedings{FinFET-ISTDM2012-Choi,
  title     = {14 nm {FinFET} stress engineering with epitaxial {SiGe} source/drain},
  author    = {Choi, Munkang and Moroz, Victor and Smith, Lee and Penzin, Oleg},
  booktitle = {International Silicon-Germanium Technology and Device Meeting (ISTDM)},
  year      = {2012},
}
%}}}